Graphene prepared on SiC by chemical vapor deposition process at low temperature
نویسندگان
چکیده
منابع مشابه
Graphene epitaxy by chemical vapor deposition on SiC.
We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...
متن کاملBilayer Graphene Growth by Low Pressure Chemical Vapor Deposition
Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films...
متن کاملLow-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...
متن کاملEffect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate
ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...
متن کاملSynthetic graphene grown by chemical vapor deposition on copper foils
TING FUNG CHUNG∗,‡, TIAN SHEN∗, HELIN CAO∗,‡, LUIS A. JAUREGUI†,‡, WEI WU§, QINGKAI YU¶, DAVID NEWELL‖ and YONG P. CHEN∗,†,‡,∗∗ ∗Department of Physics, West Lafayette, Indiana 47907, USA †School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA §Department of Electrical and Computer Engi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Electrical Engineering
سال: 2019
ISSN: 1339-309X
DOI: 10.2478/jee-2019-0064